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GP2T080A120UN-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-3

1:$9.1880

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-GP2T08-2327044
ManufacturerSemiQ
MPN #.GP2T080A120U
Estimated Lead Time30 Weeks
SampleGet Free Sample
DatasheetDatasheetGP2T080A120U(PDF)
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In Stock: 958
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 9.1880
Ext. Price$ 9.1880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$9.1880$9.1880
30$7.3340$220.0200
120$6.5620$787.4400
510$5.7900$2952.9000
1020$5.2110$5315.2200
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberGP2T080A
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)58 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1377 pF @ 1000 V
MfrSemiQ
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation188W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 20A, 20V
Package Type (Mfr.)TO-247-3
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+25V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 10mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
GP2T080A120U
PCN Assembly/Origin
GP2T080 01-Aug-22
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)