GCMX080B120S1-E1N-Channel 1200 V 30A (Tc) 142W (Tc) Chassis Mount SOT-227
1:$19.9010
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-GCMX08-2786943
ManufacturerSemiQ
MPN #.GCMX080B120S1-E1
Estimated Lead Time30 Weeks
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Datasheet
GCMX080B120S1-E... (PDF)
GCMX080B120S1-E... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$19.9010
Ext. Price$19.9010
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$19.9010$19.9010
10$16.9000$169.0010
100$15.3690$1536.9060
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)58 nC @ 20 V
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation142W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 20A, 20V
Package Type (Mfr.)SOT-227
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+25V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 10mA
Base Product NumberGCMX080
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1336 pF @ 1000 V
Package / CaseSOT-227-4, miniBLOC
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Datasheets
Environmental & Export Classifications
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
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