GCMX040B120S1-E1N-Channel 1200 V 57A (Tc) 242W (Tc) Chassis Mount SOT-227
1:$24.1320
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-GCMX04-2380709
ManufacturerSemiQ
MPN #.GCMX040B120S1-E1
Estimated Lead Time30 Weeks
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Datasheet
GCMX040B120S1-E... (PDF)
GCMX040B120S1-E... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$24.1320
Ext. Price$24.1320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$24.1320$24.1320
10$21.4410$214.4130
100$18.7530$1875.3130
500$16.0020$8001.1560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberGCMX040
Continuous Drain Current (ID) @ 25°C57A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)121 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3185 pF @ 1000 V
MfrSemiQ
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation242W (Tc)
RDS(on) Drain-to-Source On Resistance52mOhm @ 40A, 20V
Package Type (Mfr.)SOT-227
TechnologySiC (Silicon Carbide Junction Transistor)
Gate-to-Source Voltage (Vɢs)+25V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 10mA
Package / CaseSOT-227-4, miniBLOC
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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