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GCMX040A120B3H1PMosfet Array 1200V (1.2kV) 53A (Tc) 208W (Tc) Chassis Mount

1:$55.0220

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR289-GCMX04-2897063
ManufacturerSemiQ
MPN #.GCMX040A120B3H1P
Estimated Lead Time26 Weeks
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DatasheetDatasheetGCMX040A120B3H1... (PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 24, 2024
* Quantity
Unit Price$55.0220
Ext. Price$55.0220
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$55.0220$55.0220
10$50.0230$500.2250
25$48.3490$1208.7270
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusActive
Configuration4 N-Channel (Full Bridge)
Drain-to-Source Voltage (VDS)1200V (1.2kV)
FET Feature-
Grade-
Mounting StyleChassis Mount
Operating Temperature-40°C ~ 175°C (TJ)
Power - Max208W (Tc)
Qualification-
Package Type (Mfr.)-
TechnologySilicon Carbide (SiC)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 10mA
RDS(on) Drain-to-Source On Resistance52mOhm @ 40A, 20V
Gate Charge Total (Qg)(Max.)125nC @ 20V
Continuous Drain Current (ID) @ 25°C53A (Tc)
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3200pF @ 800V
Package / CaseModule
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
GCMX040A120B3H1P
Environmental & Export Classifications
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
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