GCMX020B120S1-E1N-Channel 1200 V 113A (Tc) 395W (Tc) Chassis Mount SOT-227
1:$31.6730
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-GCMX02-2941406
ManufacturerSemiQ
MPN #.GCMX020B120S1-E1
Estimated Lead Time26 Weeks
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Datasheet
GCMX020B120S1-E... (PDF)
GCMX020B120S1-E... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$31.6730
Ext. Price$31.6730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$31.6730$31.6730
10$24.3770$243.7690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C113A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Grade-
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation395W (Tc)
Qualification-
Package Type (Mfr.)SOT-227
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+25V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 20mA
RDS(on) Drain-to-Source On Resistance28mOhm @ 50A, 20V
Gate Charge Total (Qg)(Max.)216 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5349 pF @ 1000 V
Package / CaseSOT-227-4, miniBLOC
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Datasheets
Environmental & Export Classifications
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
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