SI3139KL3-TPP-Channel 20 V 660mA (Ta) 100mW Surface Mount DFN1006-3
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ABRmicro #.ABR2045-SI3139-243177
ManufacturerMCC (Micro Commercial Components)
MPN #.SI3139KL3-TP
Estimated Lead Time-
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Datasheet
SI3139KL3(PDF)
SI3139KL3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 7, 2024
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N-Channel 20 V 750mA (Ta) 100mW Surface Mount DFN1006-3 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSI3139
Continuous Drain Current (ID) @ 25°C660mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)113 pF @ 16 V
MfrMicro Commercial Co
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation100mW
RDS(on) Drain-to-Source On Resistance500mOhm @ 150mA, 4.5V
Package Type (Mfr.)DFN1006-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.1V @ 250µA
Package / CaseSC-101, SOT-883
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Datasheets
Environmental Information
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)