2SA1015-Y-APBipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 400 mW Through Hole TO-92
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ABRmicro #.ABR276-2SA101-5330
ManufacturerMCC (Micro Commercial Components)
MPN #.2SA1015-Y-AP
Estimated Lead Time-
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Datasheet
2SA1015-(O,Y,GR... (PDF)
2SA1015-(O,Y,GR... (PDF)
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Packaging
Tape & Box (TB)
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product Number2SA1015
Collector Current (Iᴄ)@25°C150 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Frequency - Transition80MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 125°C (TJ)
Power - Max400 mW
Package Type (Mfr.)TO-92
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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The 2SA1015-Y-AP is a PNP bipolar junction transistor (BJT) manufactured by Micro Commercial Components (MCC). It is designed to handle a maximum collector-emitter voltage of 50 volts and a continuous collector current of up to 150 mA. The transistor offers a high frequency response with a transition frequency of 80 MHz and can dissipate power up to 400 milliwatts in a through-hole TO-92 package. It features a low collector-base leakage current of 100 nA and exhibits a voltage drop of 300 mV at a collector current of 10 mA and 100 mA. Additionally, it achieves a DC current gain of 120 at a given collector current and voltage of 2 mA and 6V, respectively.
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