2SD667-D-APBipolar (BJT) Transistor NPN 80 V 1 A 140MHz 900 mW Through Hole TO-92MOD
N/A
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ABRmicro #.ABR276-2SD667-5456
ManufacturerMCC (Micro Commercial Components)
MPN #.2SD667-D-AP
Estimated Lead Time-
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Datasheet
2SD667-x, 2SD66... (PDF)
2SD667-x, 2SD66... (PDF)
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Min.&Mult.1
Packaging
Tape & Box (TB)
Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product Number2SD667
Collector Current (Iᴄ)@25°C1 A
Collector Cut-off Current (Iᴄᴇs)(Max.)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 150mA, 5V
Frequency - Transition140MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max900 mW
Package Type (Mfr.)TO-92MOD
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)80 V
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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The 2SD667-D-AP is a bipolar junction transistor (BJT) from Micro Commercial Components (MCC), featuring an NPN configuration. It is designed for use in through-hole applications with a TO-92MOD package. The transistor is capable of handling a maximum voltage of 80 volts and a current up to 1 ampere. It operates with a frequency of 140 MHz, providing a power dissipation of 900 milliwatts. With a collector-base cutoff current (ICBO) of 10 microamperes and a saturation voltage of 1 volt at 50 milliamperes and 500 milliamperes, it achieves a current gain of 160 at 150 milliamperes and 5 volts.
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