2N6718-BPBipolar (BJT) Transistor NPN 100 V 1 A 50MHz 625 mW Through Hole TO-92
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ABRmicro #.ABR276-2N6718-9771
ManufacturerMCC (Micro Commercial Components)
MPN #.2N6718-BP
Estimated Lead Time-
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Datasheet
2N6718 (PDF)
2N6718 (PDF)
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N6718
Collector Current (Iᴄ)@25°C1 A
Collector Cut-off Current (Iᴄᴇs)(Max.)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 50mA, 1V
Frequency - Transition50MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 250mA
Collector-Emitter Breakdown Voltage (Max.)100 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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The 2N6718-BP is an NPN bipolar junction transistor (BJT) manufactured by Micro Commercial Components (MCC). It features a collector-emitter voltage rating of 100 volts and a continuous collector current of 1 ampere, making it suitable for moderate power applications. The transistor operates efficiently up to a frequency of 50MHz and dissipates up to 625 milliwatts. Encased in a TO-92 through-hole package, it offers convenience for traditional soldering in PCB designs. Key parameters include a low collector cutoff current (ICBO) of 1 microampere and a collector-emitter saturation voltage of 500 millivolts at 10mA with a collector current of 250mA. It exhibits a DC current gain (hFE) of 80 at a collector current of 50mA and a collector-emitter voltage of 1V, indicative of robust switching and amplification capabilities.
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