S9012-H-BPBipolar (BJT) Transistor PNP 25 V 500 mA 150MHz 625 mW Through Hole TO-92
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ABRmicro #.ABR276-S9012--11060
ManufacturerMCC (Micro Commercial Components)
MPN #.S9012-H-BP
Estimated Lead Time-
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Datasheet
S9012-x (PDF)
S9012-x (PDF)
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Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberS9012
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce144 @ 1mA, 4V
Frequency - Transition150MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)25 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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The S9012-H-BP is a PNP bipolar junction transistor manufactured by Micro Commercial Components (MCC). It is designed for through-hole mounting and comes in a TO-92 package. The transistor can handle a maximum collector-emitter voltage of 25 V and supports a collector current up to 500 mA. It features a transition frequency of 150 MHz and a power dissipation of 625 mW. Key parameters include a base-to-emitter saturation voltage of 600 mV at a collector current of 50 mA and a maximum current gain (hFE) of 144 at a collector current of 1 mA with a collector-emitter voltage of 4 V. The component has a base current cutoff of 200 nA, making it suitable for various small-signal amplification tasks.
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