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SI3134K-TPN-Channel 20 V 750mA (Tj) 150mW (Ta) Surface Mount SOT-723

1:$0.3930

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ABRmicro #.ABR2045-SI3134-1035130
MPN #.SI3134K-TP
Estimated Lead Time-
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DatasheetDatasheetSI3134K(PDF)
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In Stock: 46
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Unit Price$ 0.3930
Ext. Price$ 0.3930
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N-Channel 20 V 750mA (Ta) 100mW Surface Mount DFN1006-3
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberSI3134
Continuous Drain Current (ID) @ 25°C750mA (Tj)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)120 pF @ 16 V
MfrMicro Commercial Co
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation150mW (Ta)
RDS(on) Drain-to-Source On Resistance800mOhm @ 450mA, 1.8V
Package Type (Mfr.)SOT-723
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseSOT-723
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The SI3134K-TP, manufactured by Micro Commercial Components (MCC), is a surface-mount N-channel MOSFET housed in a compact SOT-723 package. It is designed to handle a maximum voltage of 20 V and a continuous drain current of up to 750 mA, with a power dissipation of 150 mW under specified thermal conditions. The device operates efficiently at a gate-source voltage of 4.5V and features an input capacitance of 120 pF when subjected to 16 V. This MOSFET is suitable for applications where compact size and efficient switching performance are required.
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