SI2305B-TPP-Channel 20 V 4.2A (Tj) 1.4W Surface Mount SOT-23
1:$0.3330
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ABRmicro #.ABR2045-SI2305-1030372
ManufacturerMCC (Micro Commercial Components)
MPN #.SI2305B-TP
Estimated Lead Time10 Weeks
SampleGet Free Sample
Datasheet
SI2305B(PDF)
SI2305B(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.3330
Ext. Price$ 0.3330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3330$0.3330
10$0.2390$2.3910
100$0.1200$12.0060
500$0.1070$53.6560
1000$0.0830$82.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 20 V 750mA (Ta) 100mW Surface Mount DFN1006-3 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI2305
Continuous Drain Current (ID) @ 25°C4.2A (Tj)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)740 pF @ 4 V
MfrMicro Commercial Co
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.4W
RDS(on) Drain-to-Source On Resistance60mOhm @ 2.7A, 4.5V
Package Type (Mfr.)SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)900mV @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SI2305B-TP, manufactured by Micro Commercial Components (MCC), is a P-Channel MOSFET designed for power management applications in a compact SOT-23 surface-mount package. This transistor can handle a continuous drain current of up to 4.2A, with a maximum power dissipation of 1.4W. It features a low on-state resistance of 60mOhm at a test condition of 2.7A at 4.5V, and a gate charge of 15 nC at a gate-source voltage of 4.5V. The device can tolerate a gate-source voltage of ±8V, making it suitable for various low-voltage switching tasks where efficient power performance is required.
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