SI2303-TPP-Channel 30 V 3A (Ta) 250mW (Ta) Surface Mount SOT-23
1:$0.3330
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ABRmicro #.ABR2045-SI2303-1031746
ManufacturerMCC (Micro Commercial Components)
MPN #.SI2303-TP
Estimated Lead Time14 Weeks
SampleGet Free Sample
Datasheet
SI2303(PDF)
SI2303(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.3330
Ext. Price$ 0.3330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3330$0.3330
10$0.2390$2.3910
100$0.1200$12.0060
500$0.1070$53.6560
1000$0.0830$82.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 20 V 750mA (Ta) 100mW Surface Mount DFN1006-3 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI2303
Continuous Drain Current (ID) @ 25°C3A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)226 pF @ 100 V
MfrMicro Commercial Co
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation250mW (Ta)
RDS(on) Drain-to-Source On Resistance180mOhm @ 2A, 4.5V
Package Type (Mfr.)SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The SI2303-TP is a P-Channel MOSFET manufactured by Micro Commercial Components (MCC), designed for surface mount applications in a compact SOT-23 package. It features a drain-source voltage rating of 30 V and can handle a continuous current of up to 3A at a power dissipation of 250mW. The device exhibits a gate-source charge of 10 nC at 10 V, and a drain-source capacitance of 226 pF at 100 V, with a gate threshold voltage of ±20V. This MOSFET is suitable for light to moderate power switching tasks.
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