S9013-H-APBipolar (BJT) Transistor NPN 25 V 500 mA 150MHz 625 mW Through Hole TO-92
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ABRmicro #.ABR276-S9013--37245
ManufacturerMCC (Micro Commercial Components)
MPN #.S9013-H-AP
Estimated Lead Time-
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Datasheet
S9013-x (PDF)
S9013-x (PDF)
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Packaging
Tape & Box (TB)
Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberS9013
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce144 @ 50mA, 1V
Frequency - Transition150MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)25 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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N-Channel 20 V 750mA (Ta) 100mW Surface Mount DFN1006-3 Additional Details
The S9013-H-AP by Micro Commercial Components is an NPN Bipolar Junction Transistor (BJT) designed for through-hole mounting, housed in a TO-92 package. It operates with a maximum voltage of 25 V and can handle a current up to 500 mA, making it suitable for various low-power applications. The transistor has a power dissipation rating of 625 mW and a transition frequency of 150 MHz, indicating its capability for moderate-speed switching tasks. With a collector-emitter saturation voltage of 600 mV at 50 mA and a DC current gain of 144 at the same current level, this transistor features a balance of performance metrics suitable for general amplification and switching purposes, while having a collector cutoff current of 100 nA.
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