S9012-G-APBipolar (BJT) Transistor PNP 25 V 500 mA 150MHz 625 mW Through Hole TO-92
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ABRmicro #.ABR276-S9012--43141
ManufacturerMCC (Micro Commercial Components)
MPN #.S9012-G-AP
Estimated Lead Time-
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Datasheet
S9012-x (PDF)
S9012-x (PDF)
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Packaging
Tape & Box (TB)
Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberS9012
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce112 @ 1mA, 4V
Frequency - Transition150MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)25 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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The S9012-G-AP, manufactured by Micro Commercial Components (MCC), is a PNP bipolar junction transistor (BJT). It is designed for general-purpose amplification and switching applications. The transistor can handle a maximum voltage of 25 volts and a continuous collector current of up to 500 milliamps. It features a transition frequency of 150MHz and can dissipate power up to 625 milliwatts. The S9012-G-AP is housed in a TO-92 package, making it suitable for through-hole mounting. Additionally, it has a low leakage current of 200 nanoamperes and operates with a voltage drop of 600 millivolts at 50mA and 500mA, providing a current gain of 112 at 1mA and 4V.
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