S8550-D-BPBipolar (BJT) Transistor PNP 25 V 500 mA 150MHz 625 mW Through Hole TO-92
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ABRmicro #.ABR276-S8550--33516
ManufacturerMCC (Micro Commercial Components)
MPN #.S8550-D-BP
Estimated Lead Time-
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Datasheet
S8550-x (PDF)
S8550-x (PDF)
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Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberS8050
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 50mA, 1V
Frequency - Transition150MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)25 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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The S8550-D-BP is a PNP bipolar junction transistor manufactured by Micro Commercial Components (MCC). It is designed for low to medium current amplification and switching applications, featuring a collector-emitter voltage rating of 25V and a current capability of 500mA. The transistor operates efficiently at frequencies up to 150MHz, handling power dissipation up to 625mW. Its TO-92 through-hole package makes it suitable for manual insertion applications. With a low collector-emitter saturation voltage of 600mV at 50mA and a current gain of 160 at 50mA and 1V, this transistor ensures reliable performance in a range of electronic circuits.
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