S8050-D-BPBipolar (BJT) Transistor NPN 25 V 500 mA 150MHz 625 mW Through Hole TO-92
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ABRmicro #.ABR276-S8050--31319
ManufacturerMCC (Micro Commercial Components)
MPN #.S8050-D-BP
Estimated Lead Time-
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Datasheet
S8050-x (PDF)
S8050-x (PDF)
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Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberS8050
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 50mA, 1V
Frequency - Transition150MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)25 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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The S8050-D-BP is a bipolar junction transistor (BJT) from Micro Commercial Components (MCC) designed for NPN configurations. It is capable of handling a maximum voltage of 25 V and a continuous current of up to 500 mA. This transistor operates effectively up to a frequency of 150 MHz and can dissipate power up to 625 mW. Encased in a TO-92 through-hole package, it provides a current gain (hFE) of 160 at 50 mA and 1V, while maintaining a low collector-emitter saturation voltage of 600 mV at 50 mA, 500 mA. Additionally, it features a base-emitter leakage current of just 100 nA, making it a reliable choice for various electronic applications where moderate current and frequency performance are required.
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