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PN2222A-BPBipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 625 mW Through Hole TO-92

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ABRmicro #.ABR276-PN2222-25894
MPN #.PN2222A-BP
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DatasheetDatasheetPN2222A (PDF)
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In Stock: 9
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Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberPN2222
Collector Current (Iᴄ)@25°C600 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition300MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)40 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The PN2222A-BP is a Bipolar Junction Transistor (BJT) manufactured by Micro Commercial Components (MCC). It is an NPN type transistor with a maximum voltage rating of 40 V and can handle continuous currents up to 600 mA. The device offers a transition frequency of 300 MHz, indicating its suitability for high-frequency applications. With a power dissipation capability of 625 mW, it is packaged in a TO-92 through-hole configuration. The transistor features a VCE(sat) of 1V at 50mA, 500mA, and displays a low leakage current of 10nA. It has a DC current gain (hFE) of 100 at a collector current of 150mA with a collector-emitter voltage of 10V, highlighting its efficiency in amplification tasks.
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