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MPSA13-BPBipolar (BJT) Transistor NPN - Darlington 30 V 500 mA 125MHz 625 mW Through Hole TO-92

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ABRmicro #.ABR276-MPSA13-28354
MPN #.MPSA13-BP
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In Stock: 13
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Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberMPSA13
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition125MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Collector-Emitter Breakdown Voltage (Max.)30 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The MPSA13-BP is a bipolar junction transistor (BJT) of the NPN Darlington configuration, manufactured by Micro Commercial Components (MCC). This component is housed in a TO-92 through-hole package, allowing for straightforward integration into various circuits. It supports a collector-emitter voltage of up to 30 volts and a maximum collector current of 500 mA. The transistor boasts a transition frequency of 125 MHz, delivering reliable performance in high-frequency applications. Its power dissipation capacity is rated at 625 mW, and it features a high current gain of 10,000 at a collector current of 100 mA and a base-emitter voltage of 5V. The MPSA13-BP also demonstrates low leakage currents, marked by a collector-base cutoff current (ICBO) of 100 nA and features a base-emitter saturation voltage of 1.5V at a base current of 100µA and a collector current of 100mA.
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