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MPS2907A-H-BPBipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 625 mW Through Hole TO-92

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ABRmicro #.ABR276-MPS290-39341
MPN #.MPS2907A-H-BP
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Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberMPS2907
Collector Current (Iᴄ)@25°C600 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 150mA, 10V
Frequency - Transition200MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)60 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The MPS2907A-H-BP is a PNP bipolar junction transistor manufactured by Micro Commercial Components (MCC). It is designed to handle a maximum collector-emitter voltage of 60 volts and a continuous collector current of up to 600 milliamperes. The device features a transition frequency of 200 MHz, making it suitable for high-speed operations. Packaged in a TO-92 through-hole configuration, it is capable of dissipating up to 625 milliwatts of power. The transistor exhibits a base-emitter saturation voltage of 600 mV at a collector current of 50 mA and 500 mA, with a DC current gain (hFE) of 200 at a collector current of 150 mA and a collector-emitter voltage of 10 V. Additionally, it maintains a low leakage current of just 50 nA.
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