KSD471A-Y-APBipolar (BJT) Transistor NPN 30 V 1 A 130MHz 800 mW Through Hole TO-92
N/A
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ABRmicro #.ABR276-KSD471-23591
ManufacturerMCC (Micro Commercial Components)
MPN #.KSD471A-Y-AP
Estimated Lead Time-
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Datasheet
KSD471A (PDF)
KSD471A (PDF)
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Min.&Mult.1
Packaging
Tape & Box (TB)
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberKSD471
Collector Current (Iᴄ)@25°C1 A
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 1V
Frequency - Transition130MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Power - Max800 mW
Package Type (Mfr.)TO-92
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Collector-Emitter Breakdown Voltage (Max.)30 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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N-Channel 20 V 750mA (Ta) 100mW Surface Mount DFN1006-3 Additional Details
The KSD471A-Y-AP, manufactured by Micro Commercial Components (MCC), is a bipolar junction transistor (BJT) of the NPN type. It is designed for use in through-hole applications and is housed in a TO-92 package. The transistor supports a maximum collector-emitter voltage of 30 V and can handle continuous collector currents up to 1 A. It offers a high transition frequency of 130 MHz and power dissipation capacity of 800 mW. The device features a collector-emitter saturation voltage of 500 mV at a collector current of 100 mA, with a DC current gain (hFE) of 120, underscoring its efficiency in switching applications. The KSD471A-Y-AP also maintains a low collector-to-base cutoff current rating of 100 nA, indicating minimal leakage in its off state.
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