BC857BL3-TPBipolar (BJT) Transistor PNP 45 V 100 mA 150 mW Surface Mount DFN1006-3
1:$0.0320
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR276-BC857B-40698
ManufacturerMCC (Micro Commercial Components)
MPN #.BC857BL3-TP
Estimated Lead Time16 Weeks
SampleGet Free Sample
Datasheet
BC856AL3 - BC85... (PDF)
BC856AL3 - BC85... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.0320
Ext. Price$0.0320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
10000$0.0320$318.7500
30000$0.0310$924.3750
50000$0.0280$1381.2500
100000$0.0240$2443.7500
250000$0.0240$6109.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberBC857
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
MfrMicro Commercial Co
Mounting StyleSurface Mount
Operating Temperature-
Power - Max150 mW
Package Type (Mfr.)DFN1006-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic-
Collector-Emitter Breakdown Voltage (Max.)45 V
Package / CaseSC-101, SOT-883
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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N-Channel 20 V 750mA (Ta) 100mW Surface Mount DFN1006-3 Additional Details
The BC857BL3-TP is a surface mount PNP bipolar junction transistor (BJT) manufactured by Micro Commercial Components (MCC). It is designed with a DFN1006-3 package, providing a compact form factor suitable for various electronic applications. The transistor can handle a voltage of up to 45 volts and a current of 100 milliamps, with a power dissipation capacity of 150 milliwatts. This makes it an efficient choice for low-power switching and amplification tasks in compact circuits.
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