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BC847BL3-TPBipolar (BJT) Transistor NPN 45 V 100 mA 150 mW Surface Mount DFN1006-3

1:$0.0280

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BC847B-128731
MPN #.BC847BL3-TP
Estimated Lead Time16 Weeks
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In Stock: 46
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 0.0280
Ext. Price$ 0.0280
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
10000$0.0280$280.0000
30000$0.0280$840.0000
50000$0.0240$1200.0000
100000$0.0220$2200.0000
250000$0.0220$5500.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 400 mW Through Hole TO-92
Bipolar (BJT) Transistor NPN 80 V 1 A 140MHz 900 mW Through Hole TO-92MOD
Bipolar (BJT) Transistor PNP 25 V 500 mA 150MHz 625 mW Through Hole TO-92
Bipolar (BJT) Transistor PNP 45 V 100 mA 150MHz 450 mW Through Hole TO-92
N-Channel 20 V 750mA (Ta) 100mW Surface Mount DFN1006-3
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberBC847
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
MfrMicro Commercial Co
Mounting StyleSurface Mount
Operating Temperature-
Power - Max150 mW
Package Type (Mfr.)DFN1006-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic-
Collector-Emitter Breakdown Voltage (Max.)45 V
Package / CaseSC-101, SOT-883
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)