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BC636-10-APBipolar (BJT) Transistor PNP 45 V 1 A 100MHz 830 mW Through Hole TO-92

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ABRmicro #.ABR276-BC636--35421
ManufacturerMCC (Micro Commercial Components)
MPN #.BC636-10-AP
Estimated Lead Time-
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DatasheetDatasheetBC636-1x, BC638... (PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Box (TB)
Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberBC636
Collector Current (Iᴄ)@25°C1 A
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Frequency - Transition100MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max830 mW
Package Type (Mfr.)TO-92
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)45 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BC636-1x, BC638, BC640
Environmental Information
Micro Commercial CA Prop65Micro Commercial REACHMicro Commercial RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 23/Jan/2020
Video File
Micro Commercial Components Corporate Video
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The BC636-10-AP, manufactured by Micro Commercial Components (MCC), is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a collector-emitter voltage of up to 45 volts and a continuous collector current of 1 ampere. The transistor offers a transition frequency of 100MHz and a maximum power dissipation of 830 milliwatts, making it suitable for various electronic circuits. Packaged in a TO-92 through-hole form factor, it ensures ease of use in prototyping and breadboard setups. Key parameters include a DC current gain of 63 at 150mA and a maximum collector-base leakage current (ICBO) of 100nA. The device presents a low collector-emitter saturation voltage, with 500mV at 50mA and 500mA, facilitating efficient performance in low-voltage applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.