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BC557C-BPBipolar (BJT) Transistor PNP 45 V 100 mA 150MHz 625 mW Through Hole TO-92
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ABRmicro #.ABR276-BC557C-36093
ManufacturerMCC (Micro Commercial Components)
MPN #.BC557C-BP
Estimated Lead Time-
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DatasheetBC556x, BC557x,... (PDF)
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In Stock: 9
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Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberBC557
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Frequency - Transition150MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Collector-Emitter Breakdown Voltage (Max.)45 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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N-Channel 20 V 750mA (Ta) 100mW Surface Mount DFN1006-3 Additional Details
The BC557C-BP, manufactured by Micro Commercial Components (MCC), is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching. It features a maximum collector-emitter voltage of 45 V and can handle a collector current up to 100 mA. The transistor exhibits a transition frequency of 150 MHz and a power dissipation capacity of 625 mW, with a through-hole package type TO-92 that facilitates its incorporation into various circuits. It also presents a low leakage current of 100 nA and a base-emitter saturation voltage of 650 mV at 5 mA and 100 mA, respectively. The current gain, or hFE, is 420 when measured at a test condition of 2 mA collector current and 5 V collector-emitter voltage.
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