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2SD667A-D-APBipolar (BJT) Transistor NPN 100 V 1 A 140MHz 900 mW Through Hole TO-92MOD

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ABRmicro #.ABR2045-2SD667-273437
MPN #.2SD667A-D-AP
Estimated Lead Time-
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Box (TB)
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product Number2SD667
Collector Current (Iᴄ)@25°C1 A
Collector Cut-off Current (Iᴄᴇs)(Max.)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 150mA, 5V
Frequency - Transition140MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max900 mW
Package Type (Mfr.)TO-92MOD
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)100 V
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)