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2SA1048-GR-APBipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 200 mW Through Hole TO-92S
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ABRmicro #.ABR276-2SA104-20864
ManufacturerMCC (Micro Commercial Components)
MPN #.2SA1048-GR-AP
Estimated Lead Time-
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Datasheet2SA1048-Y,2SA10... (PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Box (TB)
Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product Number2SA1048
Collector Current (Iᴄ)@25°C150 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Frequency - Transition80MHz
MfrMicro Commercial Co
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max200 mW
Package Type (Mfr.)TO-92S
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-226-3, TO-92-3 Short Body, Formed Leads
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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The 2SA1048-GR-AP is a PNP bipolar junction transistor manufactured by Micro Commercial Components (MCC). It is designed for general purpose amplification and switching applications. This transistor features a collector-emitter voltage rating of 50 volts and can handle a continuous collector current up to 150 milliamps. It operates at a frequency of 80MHz, making it suitable for high-speed applications. The device is encapsulated in a TO-92S through-hole package, allowing for easy integration into various electronic circuits. With a power dissipation capability of 200 milliwatts, the transistor efficiently manages power within its operational limits. Additionally, it offers a low collector-emitter saturation voltage of 300mV at 10mA collector current and a DC current gain of 200 at a collector current of 2mA and a collector-emitter voltage of 6V. The transistor also has a low collector-base cutoff current (ICBO) of 100nA, which contributes to reduced leakage current when the transistor is in the off state.
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