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S29PL127J65BFW040FLASH - NOR Memory IC 128Mbit Parallel 65 ns 80-FBGA (8x11)

1:$7.9050

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ABRmicro #.ABR774-S29PL1-32205
ManufacturerInfineon Technologies
MPN #.S29PL127J65BFW040
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetDatasheetS29PL-J (PDF)
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In Stock: 147
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 23, 2024
* Quantity
Unit Price$7.9050
Ext. Price$7.9050
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1050$7.9050$8300.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPL-J
Packaging
Tray
Lifecycle StatusActive
Access Time65 ns
Base Product NumberS29PL127
Memory FormatFLASH
Memory InterfaceParallel
Memory Organization8M x 16
Memory Size128Mbit
Memory TypeNon-Volatile
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-25°C ~ 85°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)80-FBGA (8x11)
TechnologyFLASH - NOR
Supply Voltage2.7V ~ 3.6V
Write Cycle Time (Twc)65ns
Package / Case80-VFBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
S29PL-J
Environmental Information
RoHS Certificate
PCN Packaging
Ship Label REV
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCN3A991B1A AT
HTSUS8542.32.0071 (Other; No import duty applies)
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Additional Details
The S29PL127J65BFW040 is a 128Mbit NOR Flash memory IC manufactured by Infineon Technologies, designed for efficient data storage and retrieval. It features a parallel interface and operates with an access time of 65 nanoseconds, ensuring quick data access. The device is housed in an 80-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8x11 mm, making it suitable for compact designs. It functions within a voltage range of 2.7V to 3.6V, maintaining data integrity as a non-volatile memory solution against power interruptions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.