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S70FL01GSDSBHBC10FLASH - NOR Memory IC 1Gbit SPI - Quad I/O 80 MHz 24-BGA (8x6)
1:$10.7640
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ABRmicro #.ABR774-S70FL0-10678
ManufacturerInfineon Technologies
MPN #.S70FL01GSDSBHBC10
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetS70FL01GS (PDF)
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In Stock: 95
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 23, 2024
* Quantity
Unit Price$10.7640
Ext. Price$10.7640
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3380$10.7640$36382.9540
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesFL-S
Packaging
Tray
Lifecycle StatusActive
Base Product NumberS70FL01
Clock Frequency80 MHz
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Memory Organization128M x 8
Memory Size1Gbit
Memory TypeNon-Volatile
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 105°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)24-BGA (8x6)
TechnologyFLASH - NOR
Supply Voltage2.7V ~ 3.6V
Write Cycle Time (Twc)-
Package / Case24-TBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCN3A991B1A AT
HTSUS8542.32.0071 (Other; No import duty applies)
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PSRAM (Pseudo SRAM) Memory IC 128Mbit SPI - Octal I/O 200 MHz 35 ns 24-FBGA (6x8) Additional Details
The S70FL01GSDSBHBC10 is a 1Gbit FLASH - NOR Memory IC manufactured by Infineon Technologies, designed to operate with a voltage range of 2.7V to 3.6V. It features a storage capacity of 128M x 8 and utilizes a SPI - Quad I/O interface, allowing for efficient data transfer at speeds up to 80 MHz. The device is housed in a compact 24-BGA (8x6) package, making it suitable for applications requiring high density and reliable non-volatile memory solutions.
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