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S29PL127J80BFI050FLASH - NOR Memory IC 128Mbit Parallel 80 ns 56-FBGA (9x7)
1:$7.9050
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ABRmicro #.ABR774-S29PL1-16460
ManufacturerInfineon Technologies
MPN #.S29PL127J80BFI050
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetS29PL-J (PDF)
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In Stock: 108
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 23, 2024
* Quantity
Unit Price$7.9050
Ext. Price$7.9050
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1050$7.9050$8300.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPL-J
Packaging
Tray
Lifecycle StatusActive
Access Time80 ns
Base Product NumberS29PL127
Memory FormatFLASH
Memory InterfaceParallel
Memory Organization8M x 16
Memory Size128Mbit
Memory TypeNon-Volatile
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)56-FBGA (9x7)
TechnologyFLASH - NOR
Supply Voltage2.7V ~ 3.6V
Write Cycle Time (Twc)80ns
Package / Case56-VFBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCN3A991B1A AT
HTSUS8542.32.0071 (Other; No import duty applies)
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PSRAM (Pseudo SRAM) Memory IC 128Mbit SPI - Octal I/O 200 MHz 35 ns 24-FBGA (6x8) Additional Details
The S29PL127J80BFI050 is a NOR Flash memory IC manufactured by Infineon Technologies. It offers a storage capacity of 128 megabits and features a parallel interface, facilitating efficient data access with a read speed of 80 nanoseconds. Encased in a compact 56-pin Fine-pitch Ball Grid Array (FBGA) measuring 9x7 mm, this non-volatile memory device is organized as 8 megabits by 16 bits, and operates within a voltage range of 2.7 to 3.6 volts. This configuration makes it suitable for reliable data storage solutions in various electronic devices.
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