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S70GL02GT12FHBV23FLASH - NOR Memory IC 2Gbit Parallel 120 ns 64-FBGA (13x11)

1:$22.7280

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ABRmicro #.ABR774-S70GL0-14072
MPN #.S70GL02GT12FHBV23
Estimated Lead Time8 Weeks
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In Stock: 73
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 23, 2024
* Quantity
Unit Price$22.7280
Ext. Price$22.7280
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1600$22.7280$36364.7000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesGL-T
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Access Time120 ns
Base Product NumberS70GL02
Memory FormatFLASH
Memory InterfaceParallel
Memory Organization256M x 8, 128M x 16
Memory Size2Gbit
Memory TypeNon-Volatile
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 105°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)64-FBGA (13x11)
TechnologyFLASH - NOR
Supply Voltage2.7V ~ 3.6V
Write Cycle Time (Twc)-
Package / Case64-LBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCN3A991B1A AT
HTSUS8542.32.0071 (Other; No import duty applies)
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FLASH - NOR Memory IC 256Mbit Parallel 90 ns 64-FBGA (13x11)
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (13x11)
FLASH - NOR Memory IC 128Mbit Parallel 80 ns 56-FBGA (9x7)
FLASH - NOR Memory IC 1Gbit SPI - Quad I/O 80 MHz 24-BGA (8x6)
PSRAM (Pseudo SRAM) Memory IC 128Mbit SPI - Octal I/O 200 MHz 35 ns 24-FBGA (6x8)
Additional Details
The S70GL02GT12FHBV23 is a FLASH-NOR memory integrated circuit manufactured by Infineon Technologies. It offers a storage capacity of 2 gigabits and is configured to support either 256 megabits by 8 bits or 128 megabits by 16 bits. This non-volatile memory operates in the voltage range of 2.7V to 3.6V and has an access time of 120 nanoseconds, making it suitable for applications requiring efficient data retrieval. Encased in a 64-FBGA package with dimensions of 13mm by 11mm, it is designed to integrate into devices requiring substantial data storage within a compact form factor.
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