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S29GL512T11FHB023FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (13x11)

1:$8.5730

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ABRmicro #.ABR774-S29GL5-8196
ManufacturerInfineon Technologies
MPN #.S29GL512T11FHB023
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetDatasheetS29GL01GT, S29G... (PDF)
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In Stock: 119
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 23, 2024
* Quantity
Unit Price$8.5730
Ext. Price$8.5730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1600$8.5730$13717.3000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesGL-T
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Access Time110 ns
Base Product NumberS29GL512
Memory FormatFLASH
Memory InterfaceParallel
Memory Organization64M x 8
Memory Size512Mbit
Memory TypeNon-Volatile
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 105°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)64-FBGA (13x11)
TechnologyFLASH - NOR
Supply Voltage2.7V ~ 3.6V
Write Cycle Time (Twc)60ns
Package / Case64-LBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
S29GL01GT, S29GL512T
Environmental Information
RoHS Certificate
PCN Packaging
Ship Label REV
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCN3A991B1A AT
HTSUS8542.32.0071 (Other; No import duty applies)
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Additional Details
The S29GL512T11FHB023 is a NOR Flash memory IC manufactured by Infineon Technologies. It offers a storage capacity of 512 Mbits and is housed in a 64-ball Fine Ball Grid Array (FBGA) package with dimensions of 13x11 mm. This non-volatile memory component operates with a voltage range from 2.7V to 3.6V, offering data access times of 60 nanoseconds. Designed with a parallel interface, it features a maximum access time of 110 nanoseconds, making it suitable for applications requiring reliable data retention without power.
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