S29GL512T11FHIV33FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (13x11)
1:$6.3650
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ABRmicro #.ABR774-S29GL5-26479
ManufacturerInfineon Technologies
MPN #.S29GL512T11FHIV33
Estimated Lead Time8 Weeks
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Datasheet
S29GL01GT, S29G... (PDF)
S29GL01GT, S29G... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 23, 2024
* Quantity
Unit Price$6.3650
Ext. Price$6.3650
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Price Gradients
Qty.Unit PriceExt. Price
1600$6.3650$10184.7000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesGL-T
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Access Time110 ns
Base Product NumberS29GL512
Memory FormatFLASH
Memory InterfaceParallel
Memory Organization64M x 8
Memory Size512Mbit
Memory TypeNon-Volatile
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)64-FBGA (13x11)
TechnologyFLASH - NOR
Supply Voltage2.7V ~ 3.6V
Write Cycle Time (Twc)60ns
Package / Case64-LBGA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCN3A991B1A AT
HTSUS8542.32.0071 (Other; No import duty applies)
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PSRAM (Pseudo SRAM) Memory IC 128Mbit SPI - Octal I/O 200 MHz 35 ns 24-FBGA (6x8) Additional Details
The S29GL512T11FHIV33 is a NOR flash memory IC developed by Infineon Technologies, featuring a storage capacity of 512 megabits. Designed with a parallel interface, it supports memory read operations with an access time of 110 nanoseconds and program/erase operations with a typical speed of 60 nanoseconds. It is built in a 64-ball Fine-pitch Ball Grid Array (FBGA) package, measuring 13mm by 11mm, suitable for space-constrained applications. The memory architecture is organized as 64 million bytes (64M x 8), ensuring robust non-volatile data retention without requiring power.
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