SFW9530TMP-Channel 100 V 10.5A (Tc) 3.8W (Ta), 66W (Tc) Surface Mount TO-263 (D2PAK)
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ABRmicro #.ABR2045-SFW953-945932
ManufacturerFairchild Semiconductor
MPN #.SFW9530TM
Estimated Lead Time-
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Datasheet
SFW9530TM(PDF)
SFW9530TM(PDF)
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C10.5A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1035 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 66W (Tc)
RDS(on) Drain-to-Source On Resistance300mOhm @ 5.3A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SFW9530TM is a P-Channel MOSFET manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage of 100 volts and can handle a continuous drain current of 10.5 amperes when properly mounted on a thermal conductive surface (Tc). The transistor provides a power dissipation capacity of 3.8 watts in free air and up to 66 watts when mounted on a heatsink (Tc condition). Housed in a TO-263 (D2PAK) surface mount package, it has a gate threshold voltage of 10 volts, with a test current of 250 microamps, and sustains up to ±30 volts of gate-source voltage. This component is suitable for applications requiring a P-Channel MOSFET with high voltage and current capabilities.
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