FQPF6N25N-Channel 250 V 4A (Tc) 37W (Tc) Through Hole TO-220F-3
1:$0.2420
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ABRmicro #.ABR2045-FQPF6N-914569
ManufacturerFairchild Semiconductor
MPN #.FQPF6N25
Estimated Lead Time-
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Datasheet
FQPF6N25(PDF)
FQPF6N25(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 0.2420
Ext. Price$ 0.2420
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Price Gradients
Qty.Unit PriceExt. Price
948$0.2420$229.4160
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)300 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation37W (Tc)
RDS(on) Drain-to-Source On Resistance1Ohm @ 2A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)