FQD2N50TFN-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
1:$0.2640
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ABRmicro #.ABR2045-FQD2N5-915429
ManufacturerFairchild Semiconductor
MPN #.FQD2N50TF
Estimated Lead Time-
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Datasheet
FQD2N50TF(PDF)
FQD2N50TF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 10, 2024
* Quantity
Unit Price$ 0.2640
Ext. Price$ 0.2640
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Price Gradients
Qty.Unit PriceExt. Price
1015$0.2640$267.9600
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C1.6A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)230 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance5.3Ohm @ 800mA, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)