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FJN3306RTAPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3
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ABRmicro #.ABR292-FJN330-903861
ManufacturerFairchild Semiconductor
MPN #.FJN3306RTA
Estimated Lead Time-
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DatasheetFJN3306RTA (PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberFJN330
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 5mA, 5V
Frequency - Transition250 MHz
Mounting StyleThrough Hole
Power - Max300 mW
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
Package Type (Mfr.)TO-92-3
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK) Additional Details
The FJN3306RTA is an NPN pre-biased bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor. This component is housed in a TO-92-3 through-hole package, making it suitable for traditional circuit board assemblies. It can handle a collector-emitter voltage of up to 50 V and a continuous collector current of 100 mA. The transistor has a power dissipation capability of 300 mW and operates at a frequency of 250 MHz, indicating a moderate speed performance. The part is equipped with internal resistors, including a 47 kOhms base resistor and a 10 kOhms feedback resistor, which simplifies its biasing requirements. It demonstrates a forward voltage drop of 300mV at collector current settings of 500µA and 10mA.
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