Image is for reference only, the actual product serves as the standard.
FQPF5N50CFTUN-Channel 500 V 5A (Tc) 38W (Tc) Through Hole TO-220F-3

1:$0.5000

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQPF5N-910516
MPN #.FQPF5N50CFTU
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 2449
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 10, 2024
* Quantity
Unit Price$ 0.5000
Ext. Price$ 0.5000
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
430$0.5000$215.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
BC547TF$0.0210
Bipolar (BJT) Transistor NPN 45 V 100 mA 300MHz 500 mW Through Hole TO-92-3
BC549B$0.0360
Bipolar (BJT) Transistor NPN 30 V 100 mA 300MHz 500 mW Through Hole TO-92-3
BC558CTA$0.0210
Bipolar (BJT) Transistor PNP 30 V 100 mA 150MHz 500 mW Through Hole TO-92-3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3
FJY3005R$0.0210
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SOT-523F
FQD2N50TF$0.2640
N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
FQPF6N25$0.2420
N-Channel 250 V 4A (Tc) 37W (Tc) Through Hole TO-220F-3
Technical Specifications
SeriesFRFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)625 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance1.55Ohm @ 2.5A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)