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FQPF5N50CFTUN-Channel 500 V 5A (Tc) 38W (Tc) Through Hole TO-220F-3

1:$0.5310

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ABRmicro #.ABR278-FQPF5N-910516
ManufacturerFairchild Semiconductor
MPN #.FQPF5N50CFTU
Estimated Lead Time-
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DatasheetDatasheetFQPF5N50CFTU (PDF)
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In Stock: 2449
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.5310
Ext. Price$0.5310
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Price Gradients
Qty.Unit PriceExt. Price
430$0.5310$228.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesFRFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)625 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance1.55Ohm @ 2.5A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQPF5N50CFTU
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The FQPF5N50CFTU is an N-channel MOSFET manufactured by Fairchild Semiconductor, designed for high-voltage and moderate-current applications. Encased in a TO-220F-3 through-hole package, it operates with a maximum drain-source voltage of 500 volts and a continuous drain current of up to 5 amperes under specified conditions. The power dissipation capability is rated at 38 watts when adequately mounted. It offers a gate threshold voltage of 4 volts at 250 microamperes and has a total gate charge of 24 nanocoulombs at a gate-source voltage of 10 volts, ensuring efficient switching performance in constrained thermal environments.
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