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NDTL01N60ZT1GN-Channel 600 V 250mA (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)

1:$0.1370

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ABRmicro #.ABR2045-NDTL01-926169
MPN #.NDTL01N60ZT1G
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In Stock: 4200
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Shipping DateNovember 15, 2024
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Unit Price$ 0.1370
Ext. Price$ 0.1370
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Qty.Unit PriceExt. Price
1665$0.1370$228.2090
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C250mA (Tc)
Drain-to-Source Voltage (VDS)600 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)4.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)92 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Tc)
RDS(on) Drain-to-Source On Resistance15Ohm @ 400mA, 10V
Package Type (Mfr.)SOT-223 (TO-261)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot covered by or subject to the RoHS directive
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDTL01N60ZT1G is an N-channel MOSFET manufactured by Fairchild Semiconductor, designed for surface mount applications with its SOT-223 (TO-261) package. This MOSFET can handle a maximum voltage of 600 V and a continuous current of 250 mA at a specified case temperature. With a power dissipation capability of 2 W, it suits low to medium power applications. The gate charge is rated at 4.9 nC, making it efficient in terms of drive requirements, and it can tolerate gate-source voltages up to ±30 V. This component is suitable for general switching and amplification tasks within its specified limits.
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