NDS8435AP-Channel 30 V 7.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NDS843-1040252
ManufacturerFairchild Semiconductor
MPN #.NDS8435A
Estimated Lead Time-
SampleGet Free Sample
Datasheet
NDS8435A(PDF)
NDS8435A(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 89085
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BC547TF$0.0220
Bipolar (BJT) Transistor NPN 45 V 100 mA 300MHz 500 mW Through Hole TO-92-3BC558CTA$0.0220
Bipolar (BJT) Transistor PNP 30 V 100 mA 150MHz 500 mW Through Hole TO-92-3FJN3306RTAN/A
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3
FJY3005R$0.0220
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SOT-523F
FQD2N50TF$0.2810
N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C7.9A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)67 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 15 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance23mOhm @ 7.9A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDS8435A is a P-Channel MOSFET manufactured by Fairchild Semiconductor. It is designed for surface-mount applications and is housed in an 8-SOIC package. This MOSFET can handle a maximum drain-source voltage of 30V and supports a continuous drain current of up to 7.9A at certain conditions. It features a low threshold voltage with gate drive levels specified at 4.5V and 10V, and it has a total gate charge of 67 nC at 10V. The device can dissipate a power of up to 2.5W when mounted on an appropriate thermal surface, making it suitable for efficient power switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.