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HUFA76639P3N-Channel 100 V 51A (Tc) 180W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-HUFA76-1014300
ManufacturerFairchild Semiconductor
MPN #.HUFA76639P3
Estimated Lead Time-
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DatasheetDatasheetHUFA76639P3(PDF)
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In Stock: 681
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C51A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)86 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance26mOhm @ 51A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUFA76639P3
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUFA76639P3 is a robust N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for high-efficiency power management. Encased in a TO-220-3 package, it features a drain-to-source voltage rating of 100V and can handle a continuous current of 51A, making it suitable for high-power operations. It offers a power dissipation capacity of up to 180W. The part operates with gate-source voltages of 4.5V and 10V and withstands up to ±16V. With a total gate charge of 86 nC at 10V, this MOSFET facilitates efficient switching. Its through-hole design allows for easy installation and reliable connections in power circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.