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HUFA76419P3N-Channel 60 V 29A (Tc) 75W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-HUFA76-1034072
ManufacturerFairchild Semiconductor
MPN #.HUFA76419P3
Estimated Lead Time-
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DatasheetDatasheetHUFA76419S3S(PDF)
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In Stock: 12534
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C29A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 29A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
HUFA76419S3S
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUFA76419P3 is an N-channel MOSFET manufactured by Fairchild Semiconductor, designed for efficient power handling. It operates with a maximum drain-source voltage of 60V and can conduct up to 29A of continuous current when properly heat-sinked. The device, housed in a TO-220-3 through-hole package, is capable of dissipating up to 75W of power. It has a total gate charge of 28 nC at a gate-source voltage of 10V, and its gate allows for voltage tolerance up to ±16V, supporting robust operation in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.