HUFA76413D3STN-Channel 60 V 20A (Tc) 60W (Tc) Surface Mount TO-252 (DPAK)
1:$0.2270
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ABRmicro #.ABR2045-HUFA76-948185
ManufacturerFairchild Semiconductor
MPN #.HUFA76413D3ST
Estimated Lead Time-
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Datasheet
HUFA76413D3S(PDF)
HUFA76413D3S(PDF)
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Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 16, 2024
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Unit Price$ 0.2270
Ext. Price$ 0.2270
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Price Gradients
Qty.Unit PriceExt. Price
987$0.2270$224.4190
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesUltraFET™
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)645 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance49mOhm @ 20A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUFA76413D3ST is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for efficient power management in electronic devices. It operates with a maximum drain-source voltage of 60V and can handle a continuous current of 20A at a case temperature (Tc). With power dissipation rated at 60W, this component is housed in a compact Surface Mount TO-252 (DPAK) package, making it suitable for space-constrained environments. The device features a low on-resistance of 49 milliohms at a drain current of 20A and gate voltage of 10V, and it has an input capacitance of 645 pF at a voltage of 25V, contributing to its efficiency in switching applications.
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