HUF76423D3N-Channel 60 V 20A (Tc) 85W (Tc) Through Hole IPAK
1:$0.3340
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ABRmicro #.ABR2045-HUF764-925549
ManufacturerFairchild Semiconductor
MPN #.HUF76423D3
Estimated Lead Time-
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Datasheet
HUF76423D3(PDF)
HUF76423D3(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.3340
Ext. Price$ 0.3340
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Price Gradients
Qty.Unit PriceExt. Price
683$0.3340$227.8660
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1060 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance32mOhm @ 20A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF76423D3 from Fairchild Semiconductor is an N-channel MOSFET designed for efficient switching applications. It operates with a maximum drain-source voltage of 60 volts and can handle a continuous current of 20 amps at the case temperature. The device is capable of dissipating up to 85 watts when mounted in a suitable thermal environment. Featuring a low on-resistance of 32 milliohms at 20 amps and 10 volts, it helps in minimizing conduction losses. The gate threshold voltage is specified at 3 volts with a gate current of 250 microamperes, and it supports gate drive voltages of 4.5 volts and 10 volts. Encapsulated in the IPAK (TO-251) through-hole package, this MOSFET is suitable for a variety of electronic circuits demanding reliable power management and switching efficiency.
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