HUF75925D3STN-Channel 200 V 11A (Tc) 100W (Tc) Surface Mount TO-252 (DPAK)
1:$0.2730
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ABRmicro #.ABR2045-HUF759-926107
ManufacturerFairchild Semiconductor
MPN #.HUF75925D3ST
Estimated Lead Time-
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Datasheet
HUF75925D3ST(PDF)
HUF75925D3ST(PDF)
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Packaging
Bulk
Shipping DateNovember 15, 2024
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Unit Price$ 0.2730
Ext. Price$ 0.2730
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Price Gradients
Qty.Unit PriceExt. Price
833$0.2730$227.4610
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesUltraFET™
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)78 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1030 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation100W (Tc)
RDS(on) Drain-to-Source On Resistance275mOhm @ 11A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF75925D3ST is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for efficient power switching applications. It features a voltage rating of 200 V and a continuous current rating of 11 A, making it suitable for medium power applications. The component is capable of handling up to 100 W of power dissipation when mounted on a suitable heatsink, and is housed in a Surface Mount TO-252 (DPAK) package. With an input capacitance of 1030 pF at 25 V and a total gate charge of 78 nC at 20 V, it offers efficient switching performance. Additionally, the device can tolerate gate-source voltages up to ±20V, providing robustness in various operating conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.