HUF75842S3STN-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
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ABRmicro #.ABR2045-HUF758-1015708
ManufacturerFairchild Semiconductor
MPN #.HUF75842S3ST
Estimated Lead Time-
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Datasheet
HUF75842S3ST(PDF)
HUF75842S3ST(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C43A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)175 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2730 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance42mOhm @ 43A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF75842S3ST is an N-channel MOSFET manufactured by Fairchild Semiconductor, designed for efficient electrical switching. It is capable of handling up to 150 volts and supports a continuous drain current of 43 amperes at a controlled case temperature (Tc). The device can dissipate power up to 230 watts under similar conditions. It is housed in a surface mount TO-263 package, also referred to as D2PAK, allowing for compact placement on circuit boards. The MOSFET exhibits a total gate charge of 175 nC at a gate-to-source voltage of 20 volts, and it can tolerate a maximum gate-to-source voltage of ±20 volts. This MOSFET is suitable for high-power and high-efficiency performance in electronic circuits.
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