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HUF75332S3STN-Channel 55 V 52A (Tc) 110W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-HUF753-924373
ManufacturerFairchild Semiconductor
MPN #.HUF75332S3ST
Estimated Lead Time-
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In Stock: 16793
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateNovember 13, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C52A (Tc)
Drain-to-Source Voltage (VDS)55 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)85 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance19mOhm @ 52A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)