HUF75307T3STN-Channel 55 V 2.6A (Ta) 1.1W (Ta) Surface Mount SOT-223-4
1:$0.2950
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ABRmicro #.ABR2045-HUF753-961483
ManufacturerFairchild Semiconductor
MPN #.HUF75307T3ST
Estimated Lead Time-
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Datasheet
HUF75307T3ST(PDF)
HUF75307T3ST(PDF)
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Packaging
Bulk
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.2950
Ext. Price$ 0.2950
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Price Gradients
Qty.Unit PriceExt. Price
761$0.2950$224.7800
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C2.6A (Ta)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)250 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.1W (Ta)
RDS(on) Drain-to-Source On Resistance90mOhm @ 2.6A, 10V
Package Type (Mfr.)SOT-223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF75307T3ST is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for surface mount applications. Encased in a SOT-223-4 package, it handles a drain-source voltage of up to 55 V and a continuous drain current of 2.6A at ambient temperature conditions (Ta). The device features a drain power dissipation of 1.1W (Ta) and a gate-source voltage tolerance of ±20V. It has a gate threshold voltage of 4V at a drain current of 250µA and a total gate charge of 17 nC when operating at 20 V.
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