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FQU3P20TUP-Channel 200 V 2.4A (Tc) 2.5W (Ta), 37W (Tc) Through Hole IPAK
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ABRmicro #.ABR2045-FQU3P2-999595
ManufacturerFairchild Semiconductor
MPN #.FQU3P20TU
Estimated Lead Time-
SampleGet Free Sample
DatasheetFQU3P20TU(PDF)
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In Stock: 9368
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C2.4A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)250 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 37W (Tc)
RDS(on) Drain-to-Source On Resistance2.7Ohm @ 1.2A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQU3P20TU is a P-Channel MOSFET manufactured by Fairchild Semiconductor. It is designed to handle a maximum voltage of 200 V and current of 2.4 A, with a power dissipation capacity of 2.5 W when at ambient temperature and up to 37 W when properly heat-sinked (Tc conditions). It comes in a through-hole IPAK package, ensuring easy integration into a variety of electronic assemblies. The device features a typical input capacitance of 250 pF when measured at 25 V and a gate charge of 8 nC at 10 V, indicating its switching efficiency and responsiveness. Its maximum gate-to-source voltage is rated at ±30V, providing a safeguard against over-voltage conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.