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FQPF4N90N-Channel 900 V 2.5A (Tc) 47W (Tc) Through Hole TO-220F-3

1:$0.3110

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ABRmicro #.ABR2045-FQPF4N-949230
ManufacturerFairchild Semiconductor
MPN #.FQPF4N90
Estimated Lead Time-
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DatasheetDatasheetFQPF4N90(PDF)
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In Stock: 520
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Unit Price$ 0.3110
Ext. Price$ 0.3110
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Qty.Unit PriceExt. Price
744$0.3110$231.6170
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C2.5A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1100 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation47W (Tc)
RDS(on) Drain-to-Source On Resistance3.3Ohm @ 1.25A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQPF4N90
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF4N90 is a high-voltage, N-channel MOSFET produced by Fairchild Semiconductor. It features a maximum drain-source voltage (Vds) of 900 volts and a continuous drain current rating of 2.5 amperes under specified testing conditions. Encased in a TO-220F-3 package, it is designed for efficient heat dissipation with a power dissipation capacity of 47 watts. The component operates with a gate-source voltage (Vgs) threshold of 10 volts, drawing 250 microamperes of current at a gate-source voltage of 5 volts, while also tolerating a gate-source voltage of up to ±30 volts. This makes it a robust choice for various high-voltage switching applications within its specified operational limits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.